투명 유연 박막 트랜지스터의 구현을 위한 열처리된 산화아연 박막의 전사방법 개발
Transfer of Heat-treated ZnO Thin-film Plastic Substrates for Transparent and Flexible Thin-film Transistors
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Zinc oxide (ZnO) thin films have the advantages of growing at a low temperature and obtaining high charge mobility (carrier mobil- ity) [1]. Furthermore, the zinc oxide thin film can be used to control application resistance depending on its oxygen content. ZnO has the desired physical properties, a transparent nature, with a flexible display that makes it ideal for use as a thin-film transistor. Though these transparent flexible thin-film transistors can be manufactured in various manners, manufacturing large-area transistors using a solution process is easier owing to the low cost and flexible substrate. The advantage of being able to process at low temperatures has been attracting attention as a preferred method. However, in the case of a thin-film transistor fabricated through a solution process, it is reported that charge mobility is lower. To improve upon this, a method of improving the crystallinity through heat treatment and increas- ing electron mobility has been reported. However, as the heat treatment temperature is relatively high at 500°C, an application where a flexible substrate is absent would be more suitable.
Abstract
Zinc oxide (ZnO) thin films have the advantages of growing at a low temperature and obtaining high charge mobility (carrier mobil- ity) [1]. Furthermore, the zinc oxide thin film can be used to control application resistance depending on its oxygen content. ZnO has the desired physical properties, a transparent nature, with a flexible display that makes it ideal for use as a thin-film transistor. Though these transparent flexible thin-film transistors can be manufactured in various manners, manufacturing large-area transistors using a solution process is easier owing to the low cost and flexible substrate. The advantage of being able to process at low temperatures has been attracting attention as a preferred method. However, in the case of a thin-film transistor fabricated through a solution process, it is reported that charge mobility is lower. To improve upon this, a method of improving the crystallinity through heat treatment and increas- ing electron mobility has been reported. However, as the heat treatment temperature is relatively high at 500°C, an application where a flexible substrate is absent would be more suitable.
참고문헌 (9)
- K. Song, "Flexible solution-deposited ZnO thin-film transistors", Adv. Mater., 22(38), pp.4308~4312 (2010)[DOI]
- A. R. Brown, "Field-effect Transistors made from solution-process organic semiconductors", Synth. Met., 88(1), pp.37~55 (1997)[DOI]
- C. R. Kagan, "Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors", Science, 286(5441), pp.945~947 (1999)[DOI]
- G. Adamopoulos, "High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO2 high-k dielectric grown by spray pyrolysis in ambient air", Adv. Mater., 23(16), pp.1894~1898 (2011)[DOI]
- G. Adamopoulos, "High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO2 high-k dielectric grown by spray pyrolysis in ambient air", Adv. Mater., 23(16), pp.1894~1898 (2011)[DOI]
- S. Y. Park, "The structural, optical, and electrical characterization of highperformance, low- temperature and solution-processed alkali metal-doped ZnO TFTs", J. Mater. Chem. C, 1(7), pp.1383~1391 (2013)[DOI]
- R. R. Nair, "Fine structure constant defines visual transparency of graphene", Science, 320(5881), pp.1308~1308 (2008)[DOI]
- K. S. Kim, "Large-scale pattern growth of graphene films for stretchable transparent electrodes", Nature, 457(7230), pp.706~710 (2009)[DOI]
- Yutaca Ohya, "Thin film transistor of ZnO fabricated by chemical solution deposition", Jpn.J.Appl.Phys., 40(1), pp.297~298 (2001)[DOI]