대기압 플라즈마를 이용한 산화물 박막 트랜지스터 표면처리에 관한 연구
The Study of Improvement in the Characteristics of Oxide Thin Film Transistor by using Atmospheric Pressure Plasma
1
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
Recently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellent environmental stability, high mobility, wide-band gap energy and high transparency, and investigated through the method using vacuum system and wet solution. In the case of the method using wet solution, process is very simple, however, annealing process should be included. In this study, to overcome the problem ofannealing process, atmospheric pressure plasma was used for annealing, and the electrical characteristics suchas on/off ration and mobility of device were investigated.
Abstract
Recently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellent environmental stability, high mobility, wide-band gap energy and high transparency, and investigated through the method using vacuum system and wet solution. In the case of the method using wet solution, process is very simple, however, annealing process should be included. In this study, to overcome the problem ofannealing process, atmospheric pressure plasma was used for annealing, and the electrical characteristics suchas on/off ration and mobility of device were investigated.
참고문헌 (13)
- S. H. Jeong, , J. Phys. Chem. C, 112, pp.30~ (2008)
- J. C. Park, , Appl. Phys. Lett, 93, pp.53505~ (2008)
- S. J. Lim, , Journal of The Electrochemical Society, 157, pp.2~ (2010)
- S. H. Jeong, , Adv. Mater, 22, pp.1915~ (2010)
- K. Remashan, , Jpn. J. Appl. Phys, 49 (2010)
- K. K. Song, , J. Mater. Chem, 19 (2009)
- P. Liu, , ECS Solid State Letters, 2, pp.4~ (2013)
- S. J. Oh, , Electrochemical and Solid-State Letters, 14, pp.9~ (2011)
- K. Remashan, , Electrochemical and Solid-State Letters, 11, pp.3~ (2008)
- J. W. Hennek, , J. Am. Chem. Soc, 134 (2012)
- Y. H. Hwang, , Electrochemical and Solid-State Letters, 14, pp.7~ (2011)
- J. S. Park, , Appl. Phys. Lett, 90, pp.262106~ (2007)
- J. B. Park, , Materials Research Bulletin, 47, pp.3011~ (2012)