Investigation of microstructural and electrical properties of self-aligned Ni-InGaAs alloy contacts to InGaAs as a function of rapid thermal annealing temperature
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We have investigated microstructural and electrical properties of self-aligned Ni-InGaAs alloy used as contact material toInGaAs as a function rapid thermal annealing (RTA) temperature. The Ni-InGaAs alloy was the only phase resulting fromsolid-state reaction between Ni and InGaAs, regardless of the RTA temperature. Microstructural evolutions of Ni-InGaAs andoverlaid Ni films were observed for increasing RTA temperature. The increase in RTA temperature resulted in increasing thesize of the pinholes formed in the Ni film, which could be associated with the columnar growth nature of sputter-deposited Nifilm. A relatively uniform Ni-InGaAs layer was formed after RTA at 300 oC, which could be responsible for the minimumspecific contact resistivity observed at this temperature. Above this temperature, the Ni-InGaAs layer underwent severestructural degradation such as the formation of microvoids in its surface area, leading to a rapid increase in specific contactresistivity.
Abstract
We have investigated microstructural and electrical properties of self-aligned Ni-InGaAs alloy used as contact material toInGaAs as a function rapid thermal annealing (RTA) temperature. The Ni-InGaAs alloy was the only phase resulting fromsolid-state reaction between Ni and InGaAs, regardless of the RTA temperature. Microstructural evolutions of Ni-InGaAs andoverlaid Ni films were observed for increasing RTA temperature. The increase in RTA temperature resulted in increasing thesize of the pinholes formed in the Ni film, which could be associated with the columnar growth nature of sputter-deposited Nifilm. A relatively uniform Ni-InGaAs layer was formed after RTA at 300 oC, which could be responsible for the minimumspecific contact resistivity observed at this temperature. Above this temperature, the Ni-InGaAs layer underwent severestructural degradation such as the formation of microvoids in its surface area, leading to a rapid increase in specific contactresistivity.
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