Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications
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This paper reports a potential problem in the electrical performance of the silicide film to silicon contacts withrespect to the scaling trend in integrated circuit (IC) devices. The effects of elastic strain on the aglomeration of thecoherent silicide film embedded in an infinite matrix are studied employing continuum linear elasticity and finite-differencenumerical method. The interface atomic difusion is taken to be the dominant transport mechanism where both capilarityand elastic strain are considered for the driving forces. Under plane strain condition with elasticaly homogeneous andanisotropic system with cubic symetry, the dilatational misfit and the tetragonal misfit in the direction parallel to the filmthickness are considered. The numerical results on the shape evolution agree with the known trend that the equilibriumaspect ratio of the film increases with the elastic strain intensity. When the elastic strain intensity is taken to be only afunction of the film size, the flat film morphology with a large aspect ratio becomes increasingly unstable since theequilibrium aspect ratio decreases, as the film scales. The shape evolution results in a large decrease in contact to siliconarea, and may deteriorate the electrical performances.
Abstract
This paper reports a potential problem in the electrical performance of the silicide film to silicon contacts withrespect to the scaling trend in integrated circuit (IC) devices. The effects of elastic strain on the aglomeration of thecoherent silicide film embedded in an infinite matrix are studied employing continuum linear elasticity and finite-differencenumerical method. The interface atomic difusion is taken to be the dominant transport mechanism where both capilarityand elastic strain are considered for the driving forces. Under plane strain condition with elasticaly homogeneous andanisotropic system with cubic symetry, the dilatational misfit and the tetragonal misfit in the direction parallel to the filmthickness are considered. The numerical results on the shape evolution agree with the known trend that the equilibriumaspect ratio of the film increases with the elastic strain intensity. When the elastic strain intensity is taken to be only afunction of the film size, the flat film morphology with a large aspect ratio becomes increasingly unstable since theequilibrium aspect ratio decreases, as the film scales. The shape evolution results in a large decrease in contact to siliconarea, and may deteriorate the electrical performances.
참고문헌 (16)
- "International tech-nology roadmap for semiconductors 2002 update" (2002)
- "silicidation and post annealing on void defectsat the sidewal spacer edge of metal-oxide-silicon field-effect transistors", 75, pp.1270~ (1999)
- "fects of Ti and TiN cap-ping layers on cobalt-silicided MOS device characteris-tics in embedded DRAM and logic", 38, pp.782~ (2001)
- "ilicides for VLSI applications", pp.4 30~ (1983), Aca-demic press
- "Anomalous scaling effect of tung-sten", titanium nitride, pp.2001, 30[DOI]
- "heoretical100 J.H. Choyconsiderations on ion channeling effect through silicide-silicon interface", pp.843~ (1981)
- "Interlayer medi-ated epitaxy of cobalt silicide on silicon from lowtemperature chemical vapor deposition of cobalt", 148 (2001)
- "Epitaxial growth of CoSi2 on hydrogen-termi-nated Si(001)", 82, pp.1842.~ (2003)
- "rowth of epitaxial C54TiSi2 on Si substrate by in situ anealing in ultra-high vacum", pp.3812~ (1992)
- "Structureand orientation of epitaxial titanium silicide nanowiresdetermined by electron microdifraction", 93, pp.5670~ (2003)
- "On themorphological development of second-phase particlesin elastically-stressed solids Acta Metall. Mater. 40", pp.2979~ (1992)
- "On the shape evolution of a twodimensional coherent precipitate with a general misfitstrain", pp.195~ (2000)
- "odeling theevolution of phase boundaries in solids at the meso- andnano-scales", 51, pp.5675~ (2003)
- "he elastic behavior of a crystalline agre-gate", pp.349~ (1952)
- "lastic constants of silicon using monte carlo simu-lations", pp.6019~ (1998)
- "etermination ofthe elastic constants of a cobalt disilicide intermetalliccompound J. Appl. Phys. 68", pp.6515~ (1990)