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Studies of point defects for annealed AgInS2/GaAs epilayer
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관련 논문AI추천
Band gap energy and valance band splitting of photocurrent behaviour for AgInS2 epilayers grown by hot wall epitaxy홍광준, Seungnam Baek청정에너지연구소 · Journal of Ceramic Processing Research2005 · 제6권 제1호A study of point defects in CdIn2Te4 single crystals using photoluminescience measurements이상열, 홍광준청정에너지연구소 · Journal of Ceramic Processing Research2004 · 제5권 제4호Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxyBeongJuKim한국결정성장학회 · 한국결정성장학회지2002 · 제12권 제6호Growth and optoelectrical properties of CdIn2S4 epilayers by hot wall epitaxy홍광준청정에너지연구소 · Journal of Ceramic Processing Research2005 · 제6권 제3호Effect of Ga, S Addition in CuInSe2 for Solar Cell Applications김규호한국표면공학회 · 한국표면공학회지2004 · 제37권 제4호Growth and characterization of the high quality ZnTe epilayers for optoelectronic devicesDae-JungKim, Yang-JuneJung, YongDaeChoi, Young-MoonYu한국결정성장학회 · 한국결정성장학회지2003 · 제13권 제3호
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