Two-step electroless plated Pt ohmic contracts to p-type InGaAs
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This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at 65°C. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40min at 80°C after using Pt I bath at 50~65°C for 5min of pH 8~13. Pt film for ohmic contract to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.
Abstract
This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at 65°C. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40min at 80°C after using Pt I bath at 50~65°C for 5min of pH 8~13. Pt film for ohmic contract to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.
참고문헌 (11)
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