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Effect of La2O3 on the microstructure and electrical properties of ZnO linear resistors

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초록

ZnO-MgO-Al2O3-TiO2-Y2O3 linear resistors with different amount of La2O3 were successfully prepared by the conventionalsolid-state sintering method. The crystalline phase composition, microstructure, and electrical properties of La2O3 doped ZnOlinear resistors were investigated. The results show that La2O3 influences the lattice of ZnO and generates La-rich phase atthe grain boundaries, which improves the dense density of ZnO linear resistors. The addition of La2O3 further affect theelectrical properties of ZnO linear resistors, such as the temperature stability. The sample with 0.5 wt.% La2O3 show excellentelectrical performance with an resistance-temperature coefficient of 0.21×10-3/°C and an nonlinear coefficient of 1.05.

Abstract

ZnO-MgO-Al2O3-TiO2-Y2O3 linear resistors with different amount of La2O3 were successfully prepared by the conventionalsolid-state sintering method. The crystalline phase composition, microstructure, and electrical properties of La2O3 doped ZnOlinear resistors were investigated. The results show that La2O3 influences the lattice of ZnO and generates La-rich phase atthe grain boundaries, which improves the dense density of ZnO linear resistors. The addition of La2O3 further affect theelectrical properties of ZnO linear resistors, such as the temperature stability. The sample with 0.5 wt.% La2O3 show excellentelectrical performance with an resistance-temperature coefficient of 0.21×10-3/°C and an nonlinear coefficient of 1.05.

참고문헌 (35)

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