Electrocaloric effect in heterolayered potassium tantalate niobate thin films prepared by sol-gel method
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Heterolayered potassium tantalate niobate(KTN(70/30)/KTN(30/70)) thin films on Pt/Ti/SiO2/Si substrates prepared by the solgelprocess and spin coating method. When sintered at 700 oC or higher, the X-ray diffraction intensities of the perovskitephase were greatly increased, and it was observed as the main phase of the KTN heterolayered thin film. As the sinteringtemperature increased from 650 oC to 800 oC, the average grain size increased from 146nm to 380 nm, and the averagethickness of the KTN films coated six times was about 394-441 nm. Dielectric constant and dielectric loss of the KTN filmsintered at 750 oC and room temperature showed good properties of about 2850 and 0.573, respectively, and all films exhibitedthe typical dielectric relaxation characteristics. The phase transition temperature of KTN thin film was around 12-13 oC. Remanent polarization and the coercive field of KTN film sintered at 750 oC showed excellent properties of 23.98 μC/cm2 and35.41 kV/cm, respectively. Adiabatic temperature changes (ΔT) and electrocaloric strength of the KTN films sintered at 750 oCat 60 oC were 2.67 oC and 0.012 KcmkV-1, respectively.
Abstract
Heterolayered potassium tantalate niobate(KTN(70/30)/KTN(30/70)) thin films on Pt/Ti/SiO2/Si substrates prepared by the solgelprocess and spin coating method. When sintered at 700 oC or higher, the X-ray diffraction intensities of the perovskitephase were greatly increased, and it was observed as the main phase of the KTN heterolayered thin film. As the sinteringtemperature increased from 650 oC to 800 oC, the average grain size increased from 146nm to 380 nm, and the averagethickness of the KTN films coated six times was about 394-441 nm. Dielectric constant and dielectric loss of the KTN filmsintered at 750 oC and room temperature showed good properties of about 2850 and 0.573, respectively, and all films exhibitedthe typical dielectric relaxation characteristics. The phase transition temperature of KTN thin film was around 12-13 oC. Remanent polarization and the coercive field of KTN film sintered at 750 oC showed excellent properties of 23.98 μC/cm2 and35.41 kV/cm, respectively. Adiabatic temperature changes (ΔT) and electrocaloric strength of the KTN films sintered at 750 oCat 60 oC were 2.67 oC and 0.012 KcmkV-1, respectively.
참고문헌 (17)
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