Electrocaloric properties of K(Ta0.6Nb0.4)O3/SrTiO3 double layer thin films using metal alkoxides
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In this study, KTN/STO thin films were fabricated on Pt/Ti/SiO2/Si substrate, as a buffer layer, and their structural andelectrical properties were measured according to the number of STO coatings and investigated its applicability to electrocaloricmaterials. KTN/STO thin films showed a polycrystalline KTN XRD peaks with a pyrochlore phase. However, dependence onthe number of STO coatings and pyrochlore phase was not observed. The average grain size was about 80~90 nm, the averagethickness of 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about50-55 nm. Saturation polarization of K(Ta0.6Nb0.4)O3/SrTiO3 thin films was 24.5 μC/cm2. Electrocaloric temperature change ΔTof K(Ta0.6Nb0.4)O3 thin film showed the maximum value of 3.14 oC at around 76 oC under a high electric field of 332.9 kV/cm.
Abstract
In this study, KTN/STO thin films were fabricated on Pt/Ti/SiO2/Si substrate, as a buffer layer, and their structural andelectrical properties were measured according to the number of STO coatings and investigated its applicability to electrocaloricmaterials. KTN/STO thin films showed a polycrystalline KTN XRD peaks with a pyrochlore phase. However, dependence onthe number of STO coatings and pyrochlore phase was not observed. The average grain size was about 80~90 nm, the averagethickness of 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about50-55 nm. Saturation polarization of K(Ta0.6Nb0.4)O3/SrTiO3 thin films was 24.5 μC/cm2. Electrocaloric temperature change ΔTof K(Ta0.6Nb0.4)O3 thin film showed the maximum value of 3.14 oC at around 76 oC under a high electric field of 332.9 kV/cm.
참고문헌 (18)
- V.K. Pecharsky, , Phys. Rev. Lett., 78, pp.4494~ (1997)[DOI]
- J.H. Qiu, , J. Appl. Phys., 103, pp.084105~ (2008)[DOI]
- S. Lu, , J. Adv. Dielectrics, 2, pp.1230011~ (2012)[DOI]
- A. Nazeri, , J. Am. Ceram. Soc., 75, pp.2125~2133 (1992)[DOI]
- R. Pattnaik, , Phys. Rev. Lett., 79, pp.4677~ (1997)[DOI]
- J.Y. Wang, , J. Cryst. Growth, 116, pp.27~ (1992)[DOI]
- Hyung-jin Bae, "Dielectric Properties of Ti-doped K(Ta,Nb)O3 Thin Films", Journal of Electrical Engineering & Technology, 1(1), pp.120~126 (2006), 대한전기학회
- W. Yang, , Appl. Surf. Sci., 257, pp.7221~7225 (2011)[DOI]
- C.J. Liu, , J. Mat. Sci., 32, pp.4421~4427 (1997)[DOI]
- D. Bao, , Ferroelectrics, 188, pp.73~79 (1996)[DOI]
- B. Jaffe, "Piezoelectric Ceramics", pp.202~, Academic Press
- R.E. Newnham, , Mat. Res. Bull., 13, pp.525~536 (1978)[DOI]
- S. Jo, , Nanoscale Research Letters, 7, pp.54~ (2012)[DOI]
- T. Katayama, , Jap. J. Appl. Phys., 54, pp.10NA05~ (2015)[DOI]
- B.A. Tuttle, , pp.1981
- H. Maiwa, , Jpn. J. Appl. Phys., 55, pp.10TB09~ (2016)[DOI]
- L. Feng, , Appl. Phys. Express, 8, pp.071501~ (2015)[DOI]
- Y. Bai, , Appl. Phys. Lett., 103, pp.162902~ (2013)[DOI]