Properties and SPICE modeling for a Schottky diode fabricated on the cracked GaN epitaxial Layers on (111) silicon
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Abstract
The planar Schottky diodes werelayer on a (11) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au asthe ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of 5.51× 105 Ω.cm2 after annealing in an N2 ambient at 700oC for 30 sec. The fabricated Schottky0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But inphotoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm,and UV/visible rejection ratio of about 102. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulationwith a proposed model, which was composed with one Pt/GaNwith the experiment.
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