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The effect of the processing parameters on the growth of GaN thick films by a sublimation technique
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The effect of the processing parameters on the growth of GaN thick films by a sublimation technique노정현, 박용주, 심광보, 이태경한국결정성장학회 · 한국결정성장학회지2003 · 제13권 제5호A Systematic study on the growth of GaN single crystals using the Na-based fluxmethodF. Kawamura, H. Umeda, M. Kawahara, M. Morishita, M. Yoshimura, T. Sasaki, Y. Mori, Y. Yamada청정에너지연구소 · Journal of Ceramic Processing Research2005 · 제6권 제2호Indium assisted hydride vapor phase epitaxy of GaN filmAizhen Li, Benliang Lei, Gerard Nouet, Guanghui Yu, Haohua Ye, JPierre Ruterana, Jun Chen, Ming Qi, Sheng Meng청정에너지연구소 · Journal of Ceramic Processing Research2006 · 제7권 제2호Bulk and homoepitaxial films of III-V nitride semiconductors: Optical studiesJaime A. Freitas, Jr청정에너지연구소 · Journal of Ceramic Processing Research2005 · 제6권 제3호The effects of initial gas composition and pressure on the growth behavior of CVD SiC films최두진, Young-JinLee청정에너지연구소 · Journal of Ceramic Processing Research2002 · 제3권 제3호Growth of AlN crystals by the sublimation process강승민한국결정성장학회 · 한국결정성장학회지2008 · 제18권 제2호
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