논문KCI 등재
Indium assisted hydride vapor phase epitaxy of GaN film
청정에너지연구소 (Clean-Energy Research Institute)|2006.06|Journal of Ceramic Processing Research|제7권 제2호|pp. 180-182
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Abstract
In order to increase the migration length of adatoms in hydride vapor phase epitaxy (HVPE) of GaN films, indium was used as a surfactant in HVPE growth. For samples with indium, an increase of crystalline quality was confirmed by X-ray diffraction measurements, and an improvement of surface morphology was also observed. SIMS analysis showed that indium was incorporated in the as-grown GaN film, and indium related photoluminescence (PL) was also detected.
관련 논문AI추천
Growth of indium gallium nitride nanorod arrays by HVPE using indium metal강태원, 김화목, Kwan Soo Chung청정에너지연구소 · Journal of Ceramic Processing Research2004 · 제5권 제3호A Systematic study on the growth of GaN single crystals using the Na-based fluxmethodF. Kawamura, H. Umeda, M. Kawahara, M. Morishita, M. Yoshimura, T. Sasaki, Y. Mori, Y. Yamada청정에너지연구소 · Journal of Ceramic Processing Research2005 · 제6권 제2호Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy김민호, 남기범, 남옥현, 소병찬, 심광보, 우서휘, 원영종, 이동헌, 임수진청정에너지연구소 · Journal of Ceramic Processing Research2014 · 제15권 제2호The effect of the processing parameters on the growth of GaN thick films by a sublimation techniqueCheongHyunRoh, KwangBoShim, TaeGyoungLee, YoungJuPark한국결정성장학회 · 한국결정성장학회지2003 · 제13권 제5호Characterizations of GaN polarity controlled by substrate using the hydride vapor phase epitaxy (HVPE)technique심광보, 오동근, 이성국, 이성철, 정진현, 최봉근, Van Thi Ha Lai한국결정성장학회 · 한국결정성장학회지2008 · 제18권 제3호Bulk and homoepitaxial films of III-V nitride semiconductors: Optical studiesJaime A. Freitas, Jr청정에너지연구소 · Journal of Ceramic Processing Research2005 · 제6권 제3호
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