수소 센서용 Pd 첨가한 WO3 박막의 특성
Characteristics of Pd-doped WO3 thin film for hydrogen gas sensor
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Abstract
Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited WO3 thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. WO3 thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown WO3 polycrystalline with rhombohedral structure after annealing at 500oC. The addition effect of Pd is not the crystallinity but the suppression of grain growth of WO3. Pd was scattered an isolated small spherical grain on WO3 thin film after annealing at 500oC and it was agglomerated as an irregular large grain or diffused into WO3 after annealing at 600oC. 2 nm Pd-deposited WO3 thin films operated at 250oC showed good response and recovery property.
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