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진공증착법으로 제조한 In2O3 나노벨트막의 NO 가스감지특성

NO gas-sensing properties of In2O3 nanobelt films prepared by thermal evaporation

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주제분류공학일반

초록

Abstract

The films of indium oxide (In2O3) were deposited onto SiO2 coated Si wafers by a thermal evaporation method. Substrate temperature was varied from 25oC to 300oC. Deposition rate increased to 250oC and then decreased rapidly. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The films deposited at 250oC were found to have a nanobelt structure. Resistor-type gas-sensors were fabricated with In2O3 films using Pt as electrodes. The resistance variation of In2O3 films with the concentration of NO gas was measured. The In2O3 films deposited at 250oC showed the highest sensitivity to the NO gas.

참고문헌 (14)

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