졸겔 법으로 제조한 압전 센서용 PZT 박막의 결정 배향 및 전기적 특성 연구
A study on the crystalline orientation and electric properties ofsol-gel PZT thin film for piezoelectric sensors
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This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a PbTiO3 seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol- based sol-gel method and spin-coating on Pt/Ti/SiO2/Si substrates. The 1-μm-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a PbTiO3 seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are 24.16 μC/cm2, 2808, and 159 pC/N, respectively.
Abstract
This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a PbTiO3 seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol- based sol-gel method and spin-coating on Pt/Ti/SiO2/Si substrates. The 1-μm-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a PbTiO3 seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are 24.16 μC/cm2, 2808, and 159 pC/N, respectively.
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