Sol-Gel 법에 의한 압전 PZT 후막의 제조
Fabrication of Piezoelectric PZT Thick Film by Sol-gel Process
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Lead zirconate titanate (PZT) thick films with thicknesses of 20–100 ㎛ were fabricated on silicon substrates using an aerosoldeposition method. A PZT powder solution was prepared using a sol-gel process. The average diameters (d50) obtained were 1.67, 1.98, and 2.40μm when the pyrolysis temperatures were 300°C, 350°C, and 450°C respectively. The as-deposited film had a uniform microstructure without anycracks or pores. The as-deposited films on silicon were annealed at a temperature of 700°C. The 20-㎛-thick PZT film showed good adherencebetween the PZT film and substrate, with no tearing observed in the conventional solid phase process. This was probably because the presence ofpores produced from organic residue during annealing relieved the residual stresses in the deposited film.
Abstract
Lead zirconate titanate (PZT) thick films with thicknesses of 20–100 ㎛ were fabricated on silicon substrates using an aerosoldeposition method. A PZT powder solution was prepared using a sol-gel process. The average diameters (d50) obtained were 1.67, 1.98, and 2.40μm when the pyrolysis temperatures were 300°C, 350°C, and 450°C respectively. The as-deposited film had a uniform microstructure without anycracks or pores. The as-deposited films on silicon were annealed at a temperature of 700°C. The 20-㎛-thick PZT film showed good adherencebetween the PZT film and substrate, with no tearing observed in the conventional solid phase process. This was probably because the presence ofpores produced from organic residue during annealing relieved the residual stresses in the deposited film.
참고문헌 (13)
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