이미지 센서 적용을 위한 In0.7Ga0.3As QW HEMT 소자의 extrinsic trans-conductance에 영향을 미치는 성분들의 포괄적 연구
Comprehensive study of components affecting extrinsic transconductance in In0.7Ga0.3As quantum-well high-electron-mobility transistors for image sensor applications
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초록
The components affecting the extrinsic transconductance (gm_ext) in In0.7Ga0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (gm_int) and the gm_ext of the devices. Two types of In0.7Ga0.3As QW HEMT were fabricated with gate lengths ranging from 10 µm to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting gm_int, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (RS and RD), apparent mobility (µn_app), and saturation velocity (vsat).
Abstract
The components affecting the extrinsic transconductance (gm_ext) in In0.7Ga0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (gm_int) and the gm_ext of the devices. Two types of In0.7Ga0.3As QW HEMT were fabricated with gate lengths ranging from 10 µm to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting gm_int, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (RS and RD), apparent mobility (µn_app), and saturation velocity (vsat).
참고문헌 (13)
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