고온용 실리콘 압력센서 개발
Development of the High Temperature Silicon Pressure Sensor
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Abstract
A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/SiO2/Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as apiezoresistive layer. It also was made feasible to use under the high temperature as of over 120oC, which is generalyknown as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically andthermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated inthis research showed very high sensitivity as of 183.6mV/V kPa, and its characteristics also showed an excellent linearitywith low hysteresis. This sensor was usable up to the high temperature range of 300oC.
참고문헌 (9)
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