ICP-RIE를 이용한 저압용 실리콘 압력센서 제작
Fabrication of a silicon pressure sensor for measuring low pressure using ICP-RIE
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Abstract
In this paper, we fabricated piezoresistive pressure sensor with dry etching technology which used ICP-RIE (inductivelycoupled plasma reactive ion etching) and etching delay technology which used SOI (silicon-on-insulator). Structure of thefabricated pressure sensor shows a square diaphragm connected to a frame which was verticaly fabricated by dry etchingprocess and a single-element four-terminal gauge arranged at diaphragm edge. Sensitivity of the fabricated sensor wasabout 3.5 mV/V. kPa at 1 kPa full-scale. Measurable resolution of the sensor was not exceeding 20 Pa. The nonlinearityof the fabricated presure sensor was les than 0.5 %F.S.O. at 1 kPa full-scale.
참고문헌 (8)
- "“Development of the high temperature silicon pressure sensor”", 13(3), pp.175~181 (2004)
- "“Fabrication of a micromachined ceramic thin-film type pressure sensor for high overpressure tolerance and its characteristics”", 12(5), pp.199~204 (2003)
- "“A silicon pressure sensor with stainless diaphragm for high temperature and chemical application”", 97, pp.1481~1484 (1997)
- "“Temperature sensitivity in silicon piezoresistive pressure transducers”", pp.~30 (1983)
- "“Novel process for a monolithic integrated accelerometer”", pp.589~592 (1995)
- "“Fabrication of high-temperature silicon pressure sensor using SDBSOI technology”", 17, pp.269~276 (2005)
- "“The effect of shear stress on the piezoresistance of silicon”", pp.221~231 (1989)
- "“High temperature pressure sensor using double SOI structures with two Al2O3 films”", pp.59~64 (1994)