질화탄탈 박막형 스트레인 게이지의 제작과 특성
Fabrication and Characteristics of Tantalum Nitride Thin-Film Strain Guages
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Abstract
This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which weredeposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-(4~16%)N2) forhigh-temperature applications. These films were annealed in 2 10-6 Torr vacuum furnace at the range of 500~1000oC.Optimum deposition atmosphere and annealing temperature were determined at 900oC for 1 hr. in 8% N2 gas flowratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of768.93mW cm, a low temperature coefficient of resistance (TCR) of -84 ppm/oC and a good longitudinal gauge factor(GF) of 4.12.
참고문헌 (10)
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