Pd/다결정 3C-SiC 쇼트키 다이오드형 수소센서의 제작과 그 특성
Fabrication of a Pd/poly 3C-SiC Schottky diode hydrogensensor and its characteristics
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This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C-SiC thin films grown on Si substrates with thermal oxide layer using APCVD. Pd/poly 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were 2×10-3 A/㎠ and 0.58 eV, respectively. These devices could operate stably at about 400℃. The characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate, and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature H2 sensor applications.
Abstract
This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C-SiC thin films grown on Si substrates with thermal oxide layer using APCVD. Pd/poly 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were 2×10-3 A/㎠ and 0.58 eV, respectively. These devices could operate stably at about 400℃. The characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate, and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature H2 sensor applications.
참고문헌 (7)
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- S-Y Cheng, "A hydrogen sensitive Pd", GaAs schottky diode sensor, 2003, pp.78(2), 525~528
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