Magnetic and Crystallographic Properties of L10 FePt Thin Films in Contact with Ta and Pt Layers
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The L10 FePt thin film is a magnetic material that is noteworthy for its application in the fabrication of ultra-high-density storagedevices owing to its strong magnetic anisotropy and stable phase. Recently, it has been proposed that this alloy, which exhibits multilevelswitching behavior, bulk spin current generation, and orbital current injection capabilities, could potentially serve as an ideal componentin spin-orbit torque-driven devices. In this study, we examined the magnetic and crystallographic properties of FePt in contact with Taand Pt layers, two conventionally used metals as spin-current sources. Our findings indicate that Ta forms a smooth interface but diminishesthe perpendicular magnetic anisotropy of FePt, whereas Pt forms island-type growth that preserves this anisotropy. Moreover, weobserved that the introduction of TaOx during FePt growth modified the surface and interface free energies, which was conducive tothe formation of a flat Pt surface on FePt. This approach to controlling the free energy with oxides serves as a reference for growingspin-source materials and sets a precedent for future research on the development of spintronic devices based on novel material systems.
Abstract
The L10 FePt thin film is a magnetic material that is noteworthy for its application in the fabrication of ultra-high-density storagedevices owing to its strong magnetic anisotropy and stable phase. Recently, it has been proposed that this alloy, which exhibits multilevelswitching behavior, bulk spin current generation, and orbital current injection capabilities, could potentially serve as an ideal componentin spin-orbit torque-driven devices. In this study, we examined the magnetic and crystallographic properties of FePt in contact with Taand Pt layers, two conventionally used metals as spin-current sources. Our findings indicate that Ta forms a smooth interface but diminishesthe perpendicular magnetic anisotropy of FePt, whereas Pt forms island-type growth that preserves this anisotropy. Moreover, weobserved that the introduction of TaOx during FePt growth modified the surface and interface free energies, which was conducive tothe formation of a flat Pt surface on FePt. This approach to controlling the free energy with oxides serves as a reference for growingspin-source materials and sets a precedent for future research on the development of spintronic devices based on novel material systems.
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