Ion Implantation Effects on CoFeB Magnetic Thin Films
0
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
Magnetic thin film materials are used in various electronic device fields. We simulatedthe change of physical properties of magnetic thin film material by ion implantation and conductedexperimental verification. From the simulation results, it was possible to predict the etching byion beam, which showed a decrease in the saturation magnetization. In addition, the simulationresults confirmed that atomic diffusion may occur at the interface between the magnetic thinfilm material and the substrate, and vacancies may occur inside the thin film material. This wasshown to decrease the coercivity due to the decrease of the grain size of the magnetic thin film. Asa result, the decrease in saturation magnetization was minimal due to the ion implantation, butthe coercivity was reduced by more than 2 times, which may contribute to the development of lowpower electronic devices.
Abstract
Magnetic thin film materials are used in various electronic device fields. We simulatedthe change of physical properties of magnetic thin film material by ion implantation and conductedexperimental verification. From the simulation results, it was possible to predict the etching byion beam, which showed a decrease in the saturation magnetization. In addition, the simulationresults confirmed that atomic diffusion may occur at the interface between the magnetic thinfilm material and the substrate, and vacancies may occur inside the thin film material. This wasshown to decrease the coercivity due to the decrease of the grain size of the magnetic thin film. Asa result, the decrease in saturation magnetization was minimal due to the ion implantation, butthe coercivity was reduced by more than 2 times, which may contribute to the development of lowpower electronic devices.
참고문헌 (15)
- Alben R, "Random anisotropy in amorphous ferromagnets", J. Appl. Phys, 49(3), pp.1653~1658 (1978)
- Baek SH, "Spin currents and spin-orbit torques in ferromagnetic trilayers", Nature Mat, 17, pp.509~513 (2018)
- Chen WQ, "Characterization of dose dependent mechanical properties in helium implanted tungsten", J. Nucl. Mat, 509, pp.260~266 (2018)
- Correa MA, "Exploring the magnetization dynamics, damping and anisotropy in engineered CoFeB", (Ag, Pt) multilayer films grown onto amorphous substrate, 2019, pp.485, 75~81
- Fergen Im Seemann K, "Soft ferromagnetic thin films for high frequency applications", J. Mag. Mag. Mat, 242-245, pp.146~151 (2002)
- Fuji Y, "Highly sensitive spintronic straingauge sensor based on a MgO magnetic tunnel junction with an amorphous CoFeB sensing layer", App. Phys. Lett, 112(6), pp.062405~ (2018)
- Iwata-Harms JM, "High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory", Sci. Rep, 8, pp.14409~ (2018)
- Lavrijsen R., "Magnetism in Co80-xFexB20: Effect of crystallization", J. Appl. Phys, 109, pp.093905~ (2011)
- Maat S, "Handbook of Spintronics", pp.977~1028 (2016)
- 오승환, "Electron Beam-Assisted Conjugated Polyelectrolyte", Graphene Oxide Hybrid as a Hole Transporting Material in Organic Solar Cells, 2019, pp.13(3), 191~198[DOI]
- 오영완, "Underlayer dependence of electric field effect on magnetic anisotropy and its volatility in CoFeB", MgO structures, 2019, pp.19(1), 50~54[DOI]
- Shanaghi A, "Enhancement of mechanical properties and corrosion resistance of NiTi alloy by carbon plasma immersion ion implantation", Surf. Coat. Tech, 365, pp.52~57 (2019)
- Wong MH, "Current Aperture Vertical β-Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping", IEEE Elec. Dev. Lett, 40(3), pp.431~434 (2019)
- Zhang Y, "Breaking the current density threshold in spin-orbit-torque magnetic random access memory", Phys. Rev. B, 97(14), pp.144416~ (2018)
- Ziegler JF, "SRIM - The stopping and range of ions in matter", Nuc. Instr. Meth. Phys. Res. B, 268, pp.1818~1823 (2010)