SnO/Sn 혼합 타겟으로 스퍼터 증착된 SnO 박막의 열처리 효과
Study of the effect of vacuum annealing on sputtered SnxOy thin films by SnO/Sn composite target
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SnO:Sn(80:20 mol%) 혼합 타겟을 이용한 RF 반응성 스퍼터링으로 투명하고 전도성이 있는 SnxOy 박막을 증착하였다. 혼합 타겟은 화학적으로 안정한 조성과 높은 투과도를 주는 세라믹 타겟과 Sn과 산소의 반응성 증착으로 박막내 구조적 결함 조절이 용이한 금속 타겟의 장점을 고루 택하고 있다. 산소 분압 0%~12% 구간에서 박막을 증착하였으며, 증착 후 300oC에서 1시간 동안 진공 열처리를 진행하였다. Sn 함량이 많은 PO2= 0%의 경우를 제외하고 모든 시편들은 열 처리 전후에 80~90% 이상의 투과도를 보였으며, 안정된 p형 SnxOy 박막은 PO2= 12%에서 확인하였고, PO2= 12% 에서 열 처리 후 캐리어 농도와 이동도는 각각 6.36 × 1018cm-3와 1.02 cm2V-1s-1 이었다
Abstract
Conductive SnxOy thin films were fabricated via RF reactive sputtering using SnO:Sn (80:20 mol%) composite target. The composite target was used to produce a chemically stable composition of SnxOy thin film while controlling structural defects by chemical reaction between tin and oxygen. During sputtering pressure, RF power, and substrate temperature were fixed, and oxygen partial pressure was varied from 0% to 12%. Annealing process was carried out at 300oC for 1 hour in vacuum. Except PO2 = 0% sample, all samples showed the transmittance of 80~90% and amorphous phase before and after annealing. Electrically stable p-type SnxOy thin film with high transmittance was only obtained from the oxygen partial pressure at 12%. The carrier concentration and mobility for the PO2= 12% were 6.36 × 1018 cm-3 and 1.02 cm2V-1s-1 respectively after annealing.
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