DC, RF 마그네트론 코스퍼터링법으로 증착한 ZTO/GZO 투명전도성막의 열처리 조건이 박막의 물성에 미치는 영향
Effect of Annealing on the Electrical Property and Water Permeability of ZTO/GZO Double-layered TCO Films Deposited by DC, RF Magnetron Co-sputtering
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ZTO/GZO double layered films were prepared on unheated non-alkali glass substrates. ZTO films were deposited by RF/DC hybrid magnetron co-sputtering using ZnO (RF) target and SnO2 (DC) targets, and then GZO films were deposited by DC magnetron sputtering using an GZO (Ga2O3:5.57 wt%) target. These films were post-annealed at temperature of 200, 300oC in air and vacuum ambient for 30 min. In the case of post-annealing in air, ZTO/GZO double layer showed relatively low resistivity change, compared to GZO single layer. Furthermore, ZTO/GZO double layer revealed low WVTR, compared to GZO single layer. Therefore,it can be confirmed that ZTO film doing a role with barrier for water or oxygen diffusion.
Abstract
ZTO/GZO double layered films were prepared on unheated non-alkali glass substrates. ZTO films were deposited by RF/DC hybrid magnetron co-sputtering using ZnO (RF) target and SnO2 (DC) targets, and then GZO films were deposited by DC magnetron sputtering using an GZO (Ga2O3:5.57 wt%) target. These films were post-annealed at temperature of 200, 300oC in air and vacuum ambient for 30 min. In the case of post-annealing in air, ZTO/GZO double layer showed relatively low resistivity change, compared to GZO single layer. Furthermore, ZTO/GZO double layer revealed low WVTR, compared to GZO single layer. Therefore,it can be confirmed that ZTO film doing a role with barrier for water or oxygen diffusion.
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