RF 마그네트론 스퍼터링법에 의해 PET 기판 위에 증착된 ITO 박막의 특성에 대한 산소 분압의 영향
Effects of oxygen partial pressure on the properties of indium tin oxide film on PET substrates by RF magnetron sputtering
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ITO(indium tin oxide) 박막을 RF 마그네트론 스퍼터링법에 의해 산소 분압을 0에서 6 × 10−5Pa로 변화시킨 조건 하에서 PET 기판 위에 증착하였고, 산소 분압에 따른 ITO 박막의 전기적, 광학적 특성과 결정성의 변화를 조사하였다. 산소 분압이 1 × 10−5Pa 이하에서는 증착된 ITO 박막은 비정질 구조를 가지는 반면에 2 × 10−5Pa 이상에서는 결정질임을확인하였다. 이러한 구조적 변화와 더불어 전하 캐리어 농도와 비저항이 증가하였다. 산소 분압이 4 × 10−5Pa에서 최소 비저항(9.8 × 10−4Ω · cm)을 얻을 수 있었다. ITO/PET 박막의 광투과율도 산소 분압이 증가함에 따라 증가하였으며 산소 분압 4 × 10−5Pa에서 80 % 이상을 나타내었다. 본 연구를 통하여 최적의 산소 분압 선정이 ITO 박막의 결정성 향상, 캐리어밀도 향상 그리고 전기전도도 향상 효과를 나타냄을 확인하였다.
Abstract
Indium tin oxide (ITO) films with various oxygen partial pressure from 0 to 6 × 10−5Pa were prepared ontopolyethylene terephthalate (PET) using RF magnetron sputtering at room temperature. The structural, electrical and opticalproperties of the grown ITO films were investigated as a function of the oxygen partial pressure. The amorphous nature ofthe ITO films was dominant at the partial pressure below 1 × 10−5Pa and the degree of crystallinity increased as theoxygen concentration increased further. This structural change comes with the increased carrier concentration and reductionof the electrical resistivity down to 9.8 × 10−4Ω · cm. The average transmittance (at 400~800 nm) of the ITO deposited onthe PET substrates increased as the oxygen partial pressure increased and transmittance above 80 % was achieved with thepartial pressure of 4 × 10−5Pa. The results show that the choice of optimal oxygen partial pressure can present improvedfilm crystallinity, the increased carrier concentration, and the enhancement in the electrical conductivity.
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