Ti/Cu/Au UBM의 Au 두께와 리플로우 온도에 따른 Sn-52In 솔더와의 계면반응 및 전단 에너지
Interfacial Reaction and Shear Energy of Sn-52In Solder on Ti/Cu/Au UBMwith Variation of Au Thickness and Reflow Temperatur
1
조회
0
다운로드
0
인용
0
참고문헌
초록
Au 층의 두께를 0.1~0.7m로 변화시킨 0.1m Ti/3m Cu/Au UBM 상에서 48Sn-52In 솔더를 150-250oC의 온도 범위에서 리플로우 시 UBM/솔더 반응에 의한 금속간 화합물의 형성거동을 분석하였다. 또한 Ti/Cu/Au UBM의 Au 두께 및 리플로우 온도에 따른 볼 전단강도와 전단에너지를 분석하였다. 150oC와 200oC에서 리플로우 시에는 UBM/솔더 계면에 Cu6(Sn,In)5와 AuIn2 금속간 화합물이 형성되어 있으나, 250oC에서 리플로우 시에는 솔더 반응이 크게 증가하여 UBM이 대부분 소모되었다. 볼 전단강도는 UBM/솔더 반응과 일치하지 않는 결과를 나타내었으나, 전단 에너지는 UBM/솔더 반응과 잘 일치하는 변화 거동을 나타내었다.
Abstract
Interfacial reactions between 48Sn-52In solder and 0.1mTi/3mCu/Au under bump metallurgies(UBM) with various Au thickness of 0.1~0.7m have been investigated after solder reflow at 150oC, 200oC, and 250oC for 1 minute. Ball shear strength and shear energy of the Sn-52In solder bump on each UBM was also evaluated. With reflowing at 150oC and 200oC, Cu6(Sn,In)5 and AuIn2 intermetallic compounds were formed at UBM/solder interface. However, UBM was consumed almost completely with reflowing at 250oC. While ball shear strength was not consistent with UBM/solder reactions, ball shear energy matched well with UBM/solder reactions.
참고문헌 (12)
- "Chip on glass-interconnect for row", column driver packaging, 1998, pp.29, 34~
- "Overview of conductive adhesive interconnection technologies for LCDs", 21, pp.208~ (1998)
- "A new anisotropic conductive film with arrayed conductive particles", 19, pp.752~ (1996)
- "The contact resistance and reliability of anisotropically conductive film" (1999)
- "Anisotropic conductive adhesive films for flip-chip interconnection onto organic substrates", pp.353~ (1998)
- "A fine pitch COG technique using eutectic Bi-Sn solder joints for LCD driver IC packaging applications", pp.12~ (2001)
- "Tin-lead solder reaction in flip chip technology", 34 (2001)
- "Phase Identification and Growth Kinetics of the Intermetallic Compounds Formed during In-49Sn", Cu Soldering Reactions, 2002, pp.31, 640~
- "Low temperature interdiffusion in Au", In thin film couples, 1983, pp.101, 253~
- "Characterization of Intermetallic Compound Formation on In", Bi, pp.1987[DOI]
- "Diffusion in liquid metals", 207, pp.412~ (1996)
- "Metallurgy of low temperature Pb-free solders for electronic assembly 오태성Ti", Cu, pp.199520052005, 1(1)[DOI]