Under Bump Metallurgy의 종류와 리플로우 시간에 따른 Sn 솔더 계면반응
Interfacial Reactions of Sn Solder with Variations of Under-Bump-Metallurgy and Reflow Time
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웨이퍼 레벨 솔더범핑시 under bump metallurgy (UBM)의 종류와 리플로우 시간에 따른 Sn 솔더범프의 평균 금속간화합물 층의 두께와 UBM의 소모속도를 분석하였다. Cu UBM의 경우에는 리플로우 이전에 0.6㎛ 두께의 금속간화합물 층이 형성되어 있었으며, 250℃에서 450초 동안 리플로우함에 따라 금속간화합물 층의 두께가 4㎛으로 급격히 증가하였다. 이에 반해 Ni UBM에서는 리플로우 이전에 0.2㎛ 두께의 금속간화합물 층이 형성되었으며, 450초 리플로우에 의해 금속간화합물의 두께가 1.7㎛으로 증가하였다. Cu UBM의 소모속도는 15초 리플로우시에는 100 nm/sec, 450초 리플로우시에는 4.5 nm/sec이었으나, Ni UBM에서는 소모속도가 15초 리플로우시에는 28.7 nm/sec, 450초 리플로우시에는 1.82 nm/sec로 감소하였다.
Abstract
: Thickness of intermetallic compounds and consumption rates of under bump metallurgies (UBMs) were investigated in wafer-level solder bumping with variations of UBM materials and reflow times. In the case of Cu UBM, 0.6m-thick intermetallic compound layer was formed before reflow of Sn solder, and the average thickness of the intermetallic compound layer increased to 4m by reflowing at 250C for 450 sec. On the contrary, the intermetallic layer had a thickness of 0.2m on Ni UBM before reflow and it grew to 1.7m thickness with reflowing for 450 sec. While the consumption rates of Cu UBM were 100 nm/sec for 15-sec reflow and 4.5nm/sec for 450-sec reflow, those of Ni UBM decreased to 28.7 nm/sec for 15-sec reflow and 1.82 nm/sec for 450-sec reflow.
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