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ITO박막의 공정변수에 따른 특성 연구

Dependance of the Process Paraments on the Characteristic of the ITO Thin Films

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주제분류기계공학

초록

Abstract

ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition conditions for getting better optical and electrical ITO characteristics were the 1800~2300Å thickness, 65mm substrate-to-target distance, 350oC substrate temperature and 8% oxygen partial pressure. At these conditions, the transmittance and sheet resistance of the ITO film were 83.3% and 77.86W/□, respectively.

참고문헌 (6)

  1. J. E. Costellamo, "Handbook of Display Technology" (1992), Academic Press
  2. E. Aperathitis, "Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering" (2003)
  3. T. C. Gorjanc, "Room temperature deposition of ITO using r.f. magnetron sputtering", pp.181~185 (2002)
  4. Aldrin Antony, "Influence of target to substrate spacing on the properties of ITO thin films", 225, pp.294~301 (2004)
  5. 최병진, "이미지센서를 위한 ITO투 명전극의 제조 및 그 특성", pp.318~323 (1992)
  6. S. Ghosh, "Micro structure of indium tin oxide deposited on porous silicon by rf-sputtering", 95, pp.171~179 (2002)

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