PET 기판 위에 SiO2 버퍼층 증착에 따른 ITO 박막의 부착 및 전기적 광학적 특성 연구
A Study on Adhesion and Electro-optical Properties of ITO Films Deposited on Flexible PET Substrates with Deposition of SiO2 Buffer Layers
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Using an evaporation system, SiO2 was deposited as a buffer layer between a PET substrate and a ITO layer and then ITO/SiO2/PET layers were annealed for 1.5 hours at the temperature of 180oC. Adhesion and electro-optical properties of ITO films were studied with thickness variance of a SiO2 buffer layer. As a result of introduction of the SiO2 buffer layer, sheet resistance and resistivity increased and a ITO film with optimum sheet resistance (529.3 W/square) for an upper ITO film of resistive type touch panel could be obtained when SiO2 of 50 was deposited. And it was found that ITO films with SiO2 buffer layer have higher transmittance of 88~90% at 550 nm wavelength than ITO films with no buffer layers and the transmittance was enhanced as SiO2 thickness increased from 50 to 100. Adhesion property of ITO films with SiO2 buffer layers became better than ITO films with no buffer layers and this property was independent of SiO2 thickness variance (50~100). By depositing a SiO2 buffer layer of 50 on the PET substrate and sputtering a ITO thin film on the layer, a ITO film with enhanced adhesion, electro-optical properties could be obtained.
Abstract
Using an evaporation system, SiO2 was deposited as a buffer layer between a PET substrate and a ITO layer and then ITO/SiO2/PET layers were annealed for 1.5 hours at the temperature of 180oC. Adhesion and electro-optical properties of ITO films were studied with thickness variance of a SiO2 buffer layer. As a result of introduction of the SiO2 buffer layer, sheet resistance and resistivity increased and a ITO film with optimum sheet resistance (529.3 W/square) for an upper ITO film of resistive type touch panel could be obtained when SiO2 of 50 was deposited. And it was found that ITO films with SiO2 buffer layer have higher transmittance of 88~90% at 550 nm wavelength than ITO films with no buffer layers and the transmittance was enhanced as SiO2 thickness increased from 50 to 100. Adhesion property of ITO films with SiO2 buffer layers became better than ITO films with no buffer layers and this property was independent of SiO2 thickness variance (50~100). By depositing a SiO2 buffer layer of 50 on the PET substrate and sputtering a ITO thin film on the layer, a ITO film with enhanced adhesion, electro-optical properties could be obtained.
참고문헌 (12)
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