OLED 내구성에 미치는 무기/에폭시층 보호막의 영향
The effect of passivation film with inorganic/epoxy layers on life time characteristics of OLED device
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The passivation films with epoxy layer on LiF, SiNx and LiF/SiNx inorganic layer were fabricated on OLED to protect device from the direct damage of O2 and H2O and to apply for a buffer layer between OLED device and passivation multi-layer with organic/inorganic hybrid structure as to diminish the thermal stress and expansion. Red OLED doped with 1 vol.% Rubrene in Alq3 were used as a basic device. The device structure was multi-layer of ITO(150 ㎚)/ ELM200_HIL(50 ㎚)/ ELM002_HTL(30 ㎚)/ Alq3: 1 vol.% Rubrene(30 ㎚)/ Alq3(30 ㎚)/ LiF(0.7 ㎚)/ Al(100 ㎚). LiF/epoxy applied as a protective layer didn't contribute to the improvement of life time. While in case of SiNx/epoxy, damage was done in the passivation process because of difference in heat expansion between films which could occur during the formation of epoxy film. Using LiF/SiNx/epoxy improved lifetime significantly without suffering damage in the process of forming films, therefore, the best structure of passivation film with inorganic/epoxy layers was LiF/SiNx/E1.
Abstract
The passivation films with epoxy layer on LiF, SiNx and LiF/SiNx inorganic layer were fabricated on OLED to protect device from the direct damage of O2 and H2O and to apply for a buffer layer between OLED device and passivation multi-layer with organic/inorganic hybrid structure as to diminish the thermal stress and expansion. Red OLED doped with 1 vol.% Rubrene in Alq3 were used as a basic device. The device structure was multi-layer of ITO(150 ㎚)/ ELM200_HIL(50 ㎚)/ ELM002_HTL(30 ㎚)/ Alq3: 1 vol.% Rubrene(30 ㎚)/ Alq3(30 ㎚)/ LiF(0.7 ㎚)/ Al(100 ㎚). LiF/epoxy applied as a protective layer didn't contribute to the improvement of life time. While in case of SiNx/epoxy, damage was done in the passivation process because of difference in heat expansion between films which could occur during the formation of epoxy film. Using LiF/SiNx/epoxy improved lifetime significantly without suffering damage in the process of forming films, therefore, the best structure of passivation film with inorganic/epoxy layers was LiF/SiNx/E1.
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