진공열처리 온도에 따른 GZO/Al 적층박막의 구조적, 전기적, 광학적 특성 변화
Influence of Post-deposition Annealing Temperature on the Properties of GZO/Al Thin Film
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Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and 300oC for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at 300oC showed a higher transmittance of 81%, comparedto the other films. In addition, the electrical resistivity of the films was influenced by annealing temperatureand the lowest resistivity of 9.8 × 10−4 Ωcm was observed in the films annealed at 300oC. Due to the increasedcarrier mobility, 2.35 cm2 V−1S−1 of the films. From the experimental results, it can be concluded that increasingthe annealing temperature enhanced the optical and electrical properties of the GZO/Al films.
Abstract
Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and 300oC for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at 300oC showed a higher transmittance of 81%, comparedto the other films. In addition, the electrical resistivity of the films was influenced by annealing temperatureand the lowest resistivity of 9.8 × 10−4 Ωcm was observed in the films annealed at 300oC. Due to the increasedcarrier mobility, 2.35 cm2 V−1S−1 of the films. From the experimental results, it can be concluded that increasingthe annealing temperature enhanced the optical and electrical properties of the GZO/Al films.
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