Diffusion Behaviors and Electrical Properties in the In-Ga-Zn-O Thin Film Deposited by Radio-frequency Reactive Magnetron Sputtering
2
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
We investigated the diffusion behaviors, electrical properties, microstructures, and composition of In-Ga- Zn-O (IGZO) oxide thin films deposited by radio frequency reactive magnetron sputtering with increasing annealing temperatures. The samples were deposited at room temperature and then annealed at 300, 400, 500, 600 and 700oC in air ambient for 2 h. According to the results of time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy, no diffusion of In, Ga, and Zn components were observed at 300, 400, 500, 600oC, but there was a diffusion at 700oC. However, for the sample annealed at 700oC, considerable diffusion occurred. Especially, the concentration of In and Ga components were similar at the IGZO thin film but were decreased near the interface between the IGZO and glass substrate, while the concentration of Zn was decreased at the IGZO thin film and some Zn were partially diffused into the glass substrate. The high-resolution transmission electron microscopy results showed that a phase change at the interface between IGZO film and glass substrate began to occur at 500oC and an unidentified crystalline phase was observed at the interface between IGZO film and glass substrate due to a rapid change in composition of In, Ga and Zn at 700oC. The best values of electron mobility of 15.5 cm2/V·s and resistivity of 0.21 Ωcm were obtained from the sample annealed at 600oC.
Abstract
We investigated the diffusion behaviors, electrical properties, microstructures, and composition of In-Ga- Zn-O (IGZO) oxide thin films deposited by radio frequency reactive magnetron sputtering with increasing annealing temperatures. The samples were deposited at room temperature and then annealed at 300, 400, 500, 600 and 700oC in air ambient for 2 h. According to the results of time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy, no diffusion of In, Ga, and Zn components were observed at 300, 400, 500, 600oC, but there was a diffusion at 700oC. However, for the sample annealed at 700oC, considerable diffusion occurred. Especially, the concentration of In and Ga components were similar at the IGZO thin film but were decreased near the interface between the IGZO and glass substrate, while the concentration of Zn was decreased at the IGZO thin film and some Zn were partially diffused into the glass substrate. The high-resolution transmission electron microscopy results showed that a phase change at the interface between IGZO film and glass substrate began to occur at 500oC and an unidentified crystalline phase was observed at the interface between IGZO film and glass substrate due to a rapid change in composition of In, Ga and Zn at 700oC. The best values of electron mobility of 15.5 cm2/V·s and resistivity of 0.21 Ωcm were obtained from the sample annealed at 600oC.
참고문헌 (29)
- E. Fortunato, , Adv. Mater, 24, pp.2945~ (2012)
- J. S. Park, , Thin Solid Films, 520, pp.1679~ (2012)
- H. B. Kim, , Thin Solid Films, 550, pp.504~ (2014)
- C. H. Ahn, , Sci. Rep, 3, pp.2737~ (2013)
- S. Lee, , Appl. Phys. Lett, 98, pp.262108~ (2011)
- S, Jeong, , J. Phys. Chem. C, 112, pp.11083~ (2008)
- M. H. Kim, , Solid State Electron, 96, pp.14~ (2014)
- N. Munzenrieder, , Solid State Electron, 84, pp.198~ (2013)
- K. Everaerts, , ACS Appl. Mater. Interfaces, 5, pp.11884~ (2013)
- N. Munzenrieder, , IEEE Electron Dev. Lett, 35, pp.69~ (2014)
- J. H. Kang, , Appl. Phys. Lett, 102, pp.222103~ (2013)
- H. Hosono, , J. Non-cryst. Solids, 352, pp.851~ (2006)
- K. Nomura, , Jpn. J. Appl. Phys, 45, pp.4303~ (2006)
- K. Ide, , Thin Solid Films, 520, pp.3787~ (2012)
- Hyun Soo Shin, "Annealing temperature dependence on the positive bias stability of IGZO thin-film transistors", Journal of Information Display, 12(4), pp.209~212 (2011), 한국정보디스플레이학회
- T. Kamiya, , Journal of Display Technology, 5, pp.468~ (2009)
- 배성환, "비정질 InGaZnO4 박막의 전기적, 광학적 특성간의 상관관계 연구", 한국세라믹학회지, 47(4), pp.329~332 (2010), 한국세라믹학회
- C. C. Lo, , ESC Transactions, 28, pp.131~ (2010)
- D. Tahir, , Surf. Interface Anal, 42, pp.906~ (2010)
- Y. S. Lee, , Ceramics International, 38S, pp.S595~ (2012)
- G. H. Kim, , Appl. Phys. Lett, 94, pp.233501~ (2009)
- J. W. Park, , Jpn. J. Appl. Phys, 48, pp.111603~ (2009)
- J. R. Yim, , Jpn. J. Appl. Phys, 51, pp.011401~ (2012)
- K. Nomura, "ECS Journal of Solid State Science and Technology", 2, pp.P5~ (2013)
- S. H. Choi, , IEEE. Dev. Lett, 33, pp.396~ (2012)
- T. T. Trinh, , Semicond. Sci. Technol, 26, pp.085012~ (2011)
- B. D. Ahn, , Jpn. J. Appl. Phys, 48, pp.03B019~ (2009)
- H. S. Jeon, , J. Electrochem. Soc, 158, pp.H949~ (2011)
- M. R. Moon, , Surf. Interface Anal, 44, pp.1431~ (2012)