상온에서 증착된 IGZO 박막의 열처리 온도에 따른 특성
Characteristics of IGZO Films Formed by Room Temperature with Thermal Annealing Temperature
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We investigated the structural, electrical and optical characteristics of IGZO thin films deposited by a roomtemperature RF reactive magnetron sputtering. The thin films deposited were annealed for 2 hours at various temperatures of 300, 400, 500 and 600oC and analyzed by using X-ray diffractometer, transmission electron microscopy, atomic force microscope and Hall effects measurement system. The films annealed at 600oC were found to be crystallized and their surface roughness was decreased from 0.73 nm to 0.67 nm. According to XPS measurements, concentration of oxygen vacancies were decreased at 600oC. Optical band gap were increased to 3.31eV. The carrier concentration and Hall mobility were sharply increased at 600oC. Our results indicate that the IGZO films deposited at a room temperature can show better thin film properties through a heat treatment.
Abstract
We investigated the structural, electrical and optical characteristics of IGZO thin films deposited by a roomtemperature RF reactive magnetron sputtering. The thin films deposited were annealed for 2 hours at various temperatures of 300, 400, 500 and 600oC and analyzed by using X-ray diffractometer, transmission electron microscopy, atomic force microscope and Hall effects measurement system. The films annealed at 600oC were found to be crystallized and their surface roughness was decreased from 0.73 nm to 0.67 nm. According to XPS measurements, concentration of oxygen vacancies were decreased at 600oC. Optical band gap were increased to 3.31eV. The carrier concentration and Hall mobility were sharply increased at 600oC. Our results indicate that the IGZO films deposited at a room temperature can show better thin film properties through a heat treatment.
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