산소 가스 유량비 변화에 따른 ITO 박막의 전기적 특성에 관한 연구
A study on the electrical properties of ITO thin films with various oxygen gas flow rate
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Abstract
To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped In2O3 (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150nm with transmittance 85% and resistivity 8.110-4 Wcm and surface roughness 5.01 nm.
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