Al-1%Si/SiO2/PSG 적층 박막에서 potassium 게터링에 관한 연구
A Study on the Potassium Gettering in Al-1%Si/SiO2/PSG Multilevel Thin Films
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In order to investigate the potassium (K) gettering, Al-1%Si/SiO2/PSG multilevel thin films were fabricated. Al-1%Si thin films and SiO2/PSG passivations were deposited by using DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition), respectively. Heat treatment was carried out at 300oC for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of K, Al, Si, P, and other elements throughout the SiO2/PSG passivated Al-1%Si thin film interconnections. Potassium peaks were observed throughout the SiO2/PSG passivation layers, and especially the interface gettering at the SiO2/PSG and at the Al-1%Si/SiO2 interfaces was observed. Potassium gettering in Al-1%Si/SiO2/PSG multilevel thin films is considered to be caused by a segregation type of gettering.
Abstract
In order to investigate the potassium (K) gettering, Al-1%Si/SiO2/PSG multilevel thin films were fabricated. Al-1%Si thin films and SiO2/PSG passivations were deposited by using DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition), respectively. Heat treatment was carried out at 300oC for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of K, Al, Si, P, and other elements throughout the SiO2/PSG passivated Al-1%Si thin film interconnections. Potassium peaks were observed throughout the SiO2/PSG passivation layers, and especially the interface gettering at the SiO2/PSG and at the Al-1%Si/SiO2 interfaces was observed. Potassium gettering in Al-1%Si/SiO2/PSG multilevel thin films is considered to be caused by a segregation type of gettering.
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