SIMS를 이용한 SiO2/PSG/SiO2/Al-1%Si 및 SiO2/TEOS/SiO2/Al-1%Si 적층 박막내의 Na 게터링 분석
Analysis of the Na Gettering in SiO2/PSG/SiO2/Al-1%Si and SiO2/TEOS/SiO2/Al-1%Si Multilevel Thin Films using SIMS
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초록
The Na low temperature gettering in SiO2/PSG/SiO2/Al-1%Si and SiO2/TEOS/SiO2/Al-1%Si multilevel thin films was investigated using dynamic SIMS(secondary ion mass spectrometry) analysis. DC magnetron sputter, APCVD and PECVD techniques were utilized for the deposition of Al-1%Si thin films, SiO2/PSG/SiO2 and SiO2/TEOS/SiO2 passivations, respectively. Heat treatment was carried out at 300℃ for 5 h in air. SIMS depth profiling was used to determine the distribution of Na, Al, Si and other elements throughout the SiO2/PSG/SiO2/Al-1%Si and SiO2/TEOS/SiO2/Al-1%Si multilevel thin films. XPS was used to analyze chemical states of Si and O elements in SiO2 passivation layers. Na peaks were observed throughout the PSG/SiO2 and TEOS/SiO2 passivation layers on the Al-1%Si thin films and especially at the interfaces. Na low temperature gettering in SiO2/PSG/SiO2/Al-1%Si and SiO2/TEOS/SiO2/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering.
Abstract
The Na low temperature gettering in SiO2/PSG/SiO2/Al-1%Si and SiO2/TEOS/SiO2/Al-1%Si multilevel thin films was investigated using dynamic SIMS(secondary ion mass spectrometry) analysis. DC magnetron sputter, APCVD and PECVD techniques were utilized for the deposition of Al-1%Si thin films, SiO2/PSG/SiO2 and SiO2/TEOS/SiO2 passivations, respectively. Heat treatment was carried out at 300℃ for 5 h in air. SIMS depth profiling was used to determine the distribution of Na, Al, Si and other elements throughout the SiO2/PSG/SiO2/Al-1%Si and SiO2/TEOS/SiO2/Al-1%Si multilevel thin films. XPS was used to analyze chemical states of Si and O elements in SiO2 passivation layers. Na peaks were observed throughout the PSG/SiO2 and TEOS/SiO2 passivation layers on the Al-1%Si thin films and especially at the interfaces. Na low temperature gettering in SiO2/PSG/SiO2/Al-1%Si and SiO2/TEOS/SiO2/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering.
참고문헌 (11)
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