SIMS를 이용한 SiO2/PSG/SiO2/Al-1%Si 적층 박막내의 K 게터링 분석
Analysis of the K Gettering in SiO2/PSG/SiO2/Al-1%Si Multilevel Thin Films using SIMS
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초록
The K gettering in SiO2/PSG/SiO2/Al-1%Si multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and SiO2/PSG/SiO2 passivations, respectively. Heat treatment was carried out at 400oC for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the SiO2/PSG/SiO2/Al-1%Si multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the PSG/SiO2 passivation layers on the Al-1%Si thin films and especially at the PSG/SiO2 interfaces. K gettering in SiO2/PSG/SiO2/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be SiO2 and P2O5, respectively.
Abstract
The K gettering in SiO2/PSG/SiO2/Al-1%Si multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and SiO2/PSG/SiO2 passivations, respectively. Heat treatment was carried out at 400oC for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the SiO2/PSG/SiO2/Al-1%Si multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the PSG/SiO2 passivation layers on the Al-1%Si thin films and especially at the PSG/SiO2 interfaces. K gettering in SiO2/PSG/SiO2/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be SiO2 and P2O5, respectively.
참고문헌 (10)
- H. Zhu, "Low temperature iron gettering by grown-in defects in p-type Czochralski silicon", Superlattices and Microstructures, 99, pp.192~196 (2016)
- M. Al-Amin, "Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering", J. Appl. Phys, 119, pp.235704~ (2016)
- G. Kissinger, "Investigation of the copper gettering mechanism of oxide precipitates in silicon", ESC J. Solid State Sci. and Technol., 4, pp.N124~N129 (2015)
- S. Krivec, "Voltage-assisted sodium ion incorporation and transport in thin silicon dioxide films", Surf.Interface Anal., 42, pp.886~890 (2010)
- 최광수, "실리콘 Instrinsic Gettering 기술의 이해와 응용", 한국재료학회지, 14(1), pp.9~12 (2004), 한국재료학회
- C. Hang, "Ultrasonic bondability and antioxidation property of Ti", Cu, Ag multi-layers on Si substrate, pp.Thin Solid Films, 2012[DOI]
- M. H. Lee, "Thin Film Technology", pp.165~ (2009), Dooyangsa
- J. Walls, "VG Ionex, Methods of Surface Analysis", pp.36~40 (1987), Cambridge University Press
- C. D. Wagner, "Handbook of X-ray Photoelectron Spectroscopy", pp.54~ (1978), Perkin-Elmer Corp.
- C. D. Wagner, "Handbook of X-ray Photoelectron Spectroscopy", pp.52~ (1978), Perkin-Elmer Corp.