XPS와 SIMS를 이용한 PSG/SiO2/Al-1%Si 적층 박막내의 Na 게터링 분석
Analysis of the Na Gettering in PSG/SiO2/Al-1%Si Multilevel Thin Films using XPS and SIMS
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In order to investigate the Na gettering, PSG/SiO2/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/SiO2 passivations, respectively. Heat treatment was carried out at 300oC for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/SiO2/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/SiO2 interface and at the SiO2/Al-1%Si interfaces. Na impurity gettering in PSG/ SiO2/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be SiO2.
Abstract
In order to investigate the Na gettering, PSG/SiO2/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/SiO2 passivations, respectively. Heat treatment was carried out at 300oC for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/SiO2/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/SiO2 interface and at the SiO2/Al-1%Si interfaces. Na impurity gettering in PSG/ SiO2/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be SiO2.
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