Pulsed DC 마그네트론 스퍼터링으로 제조한 소다라임 유리의 고투과 및 대전방지 박막특성 연구
A study on the high transparent and antistatic thin films on sodalime glass by reactive pulsed DC magnetron sputtering
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Recently, transmittance of photomasks for ultra-violet (UV) region is getting more important, as the light source wavelength of an exposure process is shortened due to the demand for technologies about high integration and miniaturization of devices. Meanwhile, such problems can occur as damages or the reduction of yield of photomask as electrostatic damage (ESD) occurs in the weak parts due to the accumulation of static electricity and the electric charge on chromium metal layers which are light shielding layers, caused by the repeated contacts and the peeling off between the photomask and the substrate during the exposure process. Accordingly, there have been studies to improve transmittance and antistatic performance through various functional coatings on the photomask surface. In the present study, we manufactured antireflection films of Nb2O5,│SiO2 structure and antistatic films of ITO designed on 100 × 100 × 3 ㎜t sodalime glass by DC magnetron sputtering system so that photomask can maintain high transmittance at I-line (365 nm). ITO thin film deposited using In/Sn (10 wt.%) on sodalime glass was optimized to be 10 nm-thick, 3.0 × 103 Ω/□ sheet resistance, and about 80% transmittance, which was relatively low transmittance because of the absorption properties of ITO thin film. High average transmittance of 91.45% was obtained from a double side antireflection and antistatic thin films structure of Nb2O5 64 nm│SiO2 41 nm│ sodalime glass│ITO 10 nm│Nb2O5 64 nm│SiO2 41 nm.
Abstract
Recently, transmittance of photomasks for ultra-violet (UV) region is getting more important, as the light source wavelength of an exposure process is shortened due to the demand for technologies about high integration and miniaturization of devices. Meanwhile, such problems can occur as damages or the reduction of yield of photomask as electrostatic damage (ESD) occurs in the weak parts due to the accumulation of static electricity and the electric charge on chromium metal layers which are light shielding layers, caused by the repeated contacts and the peeling off between the photomask and the substrate during the exposure process. Accordingly, there have been studies to improve transmittance and antistatic performance through various functional coatings on the photomask surface. In the present study, we manufactured antireflection films of Nb2O5,│SiO2 structure and antistatic films of ITO designed on 100 × 100 × 3 ㎜t sodalime glass by DC magnetron sputtering system so that photomask can maintain high transmittance at I-line (365 nm). ITO thin film deposited using In/Sn (10 wt.%) on sodalime glass was optimized to be 10 nm-thick, 3.0 × 103 Ω/□ sheet resistance, and about 80% transmittance, which was relatively low transmittance because of the absorption properties of ITO thin film. High average transmittance of 91.45% was obtained from a double side antireflection and antistatic thin films structure of Nb2O5 64 nm│SiO2 41 nm│ sodalime glass│ITO 10 nm│Nb2O5 64 nm│SiO2 41 nm.
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