Optical and electrical properties of SnO2/Ag/SnO2/SiO2/ Nb2O5 hybrid film
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초록
A hybrid structure of SnO2/Ag/SnO2/SiO2/Nb2O5 was deposited on soda lime glass substrate by sequential RF/DC magnetronsputtering at room temperature and its optical and electrical properties were systematically investigated as a function of topSnO2 thickness. EMP simulation results suggested that a multilayered film of SnO2 (40 nm)/Ag (10 nm)/SnO2 (30 nm)/SiO2(10 nm)/Nb2O5 (10 nm) exhibited the highest visible transmittance of 90.1% at 550 nm, whereas experimentally measuredtransmittance showed 85.1%, somewhat lower than simulation data. The lowest Rs and ρ value were about 3.21 Ω/sq and 3.21× 10−5 Ω cm, acquired at the multi-layers with the structure of SnO2 (40 nm)/Ag (10 nm)/SnO2 (30 nm)/SiO2 (10 nm)/Nb2O5(10 nm). In addition, the sheet resistance and resistivity of SnO2/Ag/SnO2/SiO2/Nb2O5 multi layer films increased systematicallywith increasing the thickness of SnO2 layer from 40 to 55 nm. It was shown that the ÖTC values of SnO2/Ag/SnO2/SiO2/Nb2O5multi layer film were in the range of 46.4-62.1 × 10−3 Ω−1.
Abstract
A hybrid structure of SnO2/Ag/SnO2/SiO2/Nb2O5 was deposited on soda lime glass substrate by sequential RF/DC magnetronsputtering at room temperature and its optical and electrical properties were systematically investigated as a function of topSnO2 thickness. EMP simulation results suggested that a multilayered film of SnO2 (40 nm)/Ag (10 nm)/SnO2 (30 nm)/SiO2(10 nm)/Nb2O5 (10 nm) exhibited the highest visible transmittance of 90.1% at 550 nm, whereas experimentally measuredtransmittance showed 85.1%, somewhat lower than simulation data. The lowest Rs and ρ value were about 3.21 Ω/sq and 3.21× 10−5 Ω cm, acquired at the multi-layers with the structure of SnO2 (40 nm)/Ag (10 nm)/SnO2 (30 nm)/SiO2 (10 nm)/Nb2O5(10 nm). In addition, the sheet resistance and resistivity of SnO2/Ag/SnO2/SiO2/Nb2O5 multi layer films increased systematicallywith increasing the thickness of SnO2 layer from 40 to 55 nm. It was shown that the ÖTC values of SnO2/Ag/SnO2/SiO2/Nb2O5multi layer film were in the range of 46.4-62.1 × 10−3 Ω−1.
참고문헌 (19)
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