마그네트론 스퍼터링법으로 제조된 ZTZ 박막의 구조적 전기광학적 특성에 미치는 전자빔 조사의 영향
Influence of electron irradiation on the structural and optoelectronics properties of ZTZ thin films prepared by magnetron sputtering
0
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
Transparent ZnO/Ti/ZnO (ZTZ) tri-layered films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate. The thickness of the ZnO and Ti films was kept at 50 and 10 nm to consider the effect of the electron irradiation on the crystallization and opto-electrical properties of the films. From the XRD spectra, post-depostion electron irradiated films showed the characteristic peaks of ZnO(002) and Ti(200), respectively. the observed grain size of the ZnO(002) and Ti(200) enlarged up to 18.27 and 12.16 nm at an irradiation condition of 750 eV. In the figure of merit which means an opto-electrical performance of the films, as deposited films show a figure of merit of 2.0×10-5 Ω-1, while the films electron irradiated at 750 eV show a higher figure of merit of 5.7×10-5 Ω-1.
Abstract
Transparent ZnO/Ti/ZnO (ZTZ) tri-layered films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate. The thickness of the ZnO and Ti films was kept at 50 and 10 nm to consider the effect of the electron irradiation on the crystallization and opto-electrical properties of the films. From the XRD spectra, post-depostion electron irradiated films showed the characteristic peaks of ZnO(002) and Ti(200), respectively. the observed grain size of the ZnO(002) and Ti(200) enlarged up to 18.27 and 12.16 nm at an irradiation condition of 750 eV. In the figure of merit which means an opto-electrical performance of the films, as deposited films show a figure of merit of 2.0×10-5 Ω-1, while the films electron irradiated at 750 eV show a higher figure of merit of 5.7×10-5 Ω-1.
참고문헌 (14)
- D. Kim, "Improved electrical and optical properties of GZO films with a thin TiO2buffer layer deposited by RF magnetron sputtering", Ceram. Int, 40, pp.1457~1460 (2014)
- S. Peng, "Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC coupled RF magnetron sputtering at room temperature", Physica B, 503, pp.111~116 (2016)
- C. H. Huang, "Influence of deposition parameters and annealing treatment on the properties of GZO films grown using rf magnetron sputtering", Ceram. Int, 38, pp.1057~1063 (2012)
- Y. S. Kim, "Effects of electron irradiation on the properties of GZO films deposited with RF magnetron sputtering", Appl. Surf. Sci, 258, pp.3903~3906 (2012)
- F. Bocchese, "Three-zone model for Ti, Al codoped ZnO films deposited by magnetron sputtering", Surf. Interfaces, 28, pp.101595~ (2022)
- R. Ade, "Enhanced optoelectronic properties of Ti-doped ZnO nanorods for photodetector applications", Ceram. Int, 47, pp.24031~24038 (2021)
- G. Haacke, "New figure of merit for transparent conductors", J. Appl. Phys, 47, pp.4086~ (1976)
- H. Park, "Tuning properties of SnO2", Au, Jpn. J. Appl. Phys, pp.2020, 59[DOI]
- B. D. Cullity, "Elements of X-ray diffraction" (1978), Addison-Wesley Pub
- 최수현, "전자빔 조사 에너지에 따른 TIO", Ag, 한국생산제조학회지, pp.2021, 30(5)[DOI]
- B. G. Bagley, "Amorphous and liquid semiconductor" (1974), Plenum
- 송영환, "급속열처리에 따른 ZTO", Ag, 열처리공학회지, pp.2017, 30(4)[DOI]
- R. B. Marcus, "Measurements of high speed signals in solid state devices" (1990), Academic Press
- 장진규, "전자빔 표면 조사에 따른 SnO2", Ag, 한국표면공학회지, pp.2021, 54(6)[DOI]