CMP 공정에서의 웨이퍼 연마 불균일성에 대한 유한요소해석 연구
Study on Within-Wafer Non-uniformity Using Finite Element Method
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초록
Finite element analysis was carried out using wafer-scale and particle-scale models to understand the mechanism of the fast removal rate(edge effect) at wafer edges in the chemical-mechanical polishing process. This is the first to report that a particle-scale model can explain the edge effect well in terms of stress distribution and magnitude. The results also revealed that the mechanism could not be fully understood by using the waferscale model, which has been used in many previous studies. The wafer-scale model neither gives the stress magnitude that is sufficient to remove material nor indicates the coincidence between the stress distribution and the removal rate along a wafer surface.
Abstract
Finite element analysis was carried out using wafer-scale and particle-scale models to understand the mechanism of the fast removal rate(edge effect) at wafer edges in the chemical-mechanical polishing process. This is the first to report that a particle-scale model can explain the edge effect well in terms of stress distribution and magnitude. The results also revealed that the mechanism could not be fully understood by using the waferscale model, which has been used in many previous studies. The wafer-scale model neither gives the stress magnitude that is sufficient to remove material nor indicates the coincidence between the stress distribution and the removal rate along a wafer surface.
참고문헌 (17)
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