다수의 연마입자를 고려한 CMP 공정의 Stick-Slip 고찰

Abstract

In this study, we investigate the behavior of abrasive particles and change of the stick-slip pattern according to chemical mechanical polishing (CMP) process parameters when a large number of abrasive particles are fixed on a pad. The CMP process is simulated using the finite element method. In the simulation, the abrasive grains are composed of those used in the actual CMP process. Considering the cohesion of the abrasive grains with the start of the CMP process, abrasive particles with various sizes are fixed onto the pad at different intervals so that stick-slip could occur. In this analysis, we determine that when the abrasive particle size is relatively large, the stick-slip period does not change as the pressure increases while the moving speed is constant. However, if the size of the abrasive grains is relatively small, the amount of deformation of the grains increases due to the elasticity of the pad. Therefore, the stick-slip pattern may not be observed. As the number of abrasive particles increases, the stick-slip period and displacement decrease. This is consistent with the decrease in the von Mises yield stress value on the surface of the wafer as the number of abrasive grains increases. We determine that when the number of the abrasive grains increases, the polishing rate, and characteristics are improved, and scratches are reduced. Moreover, we establish that the period of stick-slip increases and the change of the stick-slip size was not large when the abrasive particle size was relatively small.