논문KCI 등재
Li-doped p-type ZnS grown by Molecular Beam Epitaxy
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초록
Abstract
Li-doped ZnS layers were grown by molecular beam epitaxy. It was found that relatively low growth temperature is suitable for effective incorporation of Li acceptors. The layers grown under optimized conditions exhibited photoluminescence spectra dominated by neutral-acceptor-bound excitons. Such layers also showed electrically p-type behavior in capacitance-voltage characteristics. The net acceptor concentration is estimated to be approximately 3 1015 cm-3.
참고문헌 (12)
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