본문 바로가기
KERD
논문KCI 등재

Li-doped p-type ZnS grown by Molecular Beam Epitaxy

1

조회

0

다운로드

0

인용

0

참고문헌

주제분류기계공학

초록

Abstract

Li-doped ZnS layers were grown by molecular beam epitaxy. It was found that relatively low growth temperature is suitable for effective incorporation of Li acceptors. The layers grown under optimized conditions exhibited photoluminescence spectra dominated by neutral-acceptor-bound excitons. Such layers also showed electrically p-type behavior in capacitance-voltage characteristics. The net acceptor concentration is estimated to be approximately 3 1015 cm-3.

참고문헌 (12)

  1. "Room temperature blue light emitting p-n diodes from Zn", 60
  2. "Control of Composition and Growth Rate of ZnMgS Grown on GaP by Molecular Beam Epitaxy Using Excess Sulfur Beam Pressure", 36, pp.1283~1286 (1997)
  3. "High temperature growth of ZnS and ZnMgS by molecular beam epitaxy under high sulfur beam pressure", 87, pp.4249~4253 (2000)
  4. "Ultraviolet stimulated emission and optical gain spectra in CdxZn1 xS-ZnS strained-layer superlattices", 61, pp.2190~2192 (1992)
  5. "Photoluminescence study of ZnS", ZnMgS single quantum wells, 1999., pp.74, 3486~3488
  6. "Molecular beam epitaxy and optical properties of ZnCdS", ZnMgS quantum wells on GaP, 2000., pp.214, 215[DOI]
  7. "Effect and comparison of co-doping of Ag and Ag+Cl in ZnS N", GaAs layers prepared by vapor-phase epitaxy, 2000., pp.214, 215[DOI]
  8. "Luminescence properties of lithium-doped ZnS epitaxial layers grown by MOCVD", 237, pp.239 (2002), 1570~1574
  9. "p-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy", pp.1695~1697 (2000)
  10. "On the growth mechanism of Li- and Na-doped Zn chalcogenides on GaAs by means of molecular beam epitaxy", 159, pp.376~379 (1996)
  11. "Li-acceptor doping in ZnS", GaAs by post-heated molecular beam epitaxy, 817~8221995
  12. "Optimization of Pretreatment of GaP Substrates for Molecular Beam Epitaxy of ZnS-Based Materials 2002.Author ProfileSang-Tae LeeHe received the B.E. degree from Korea Maritime University the M.E. and Ph. D. degree from Tottori University in Japan. He is currently a professor Div. of Mechatronics Engineering at Korea Maritime University in Busan. His research interest is information displays.", 229, pp.217~220

관련 논문AI추천

이 간행물의 다른 논문 (9건)