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Growth and characterization of the high quality ZnTe epilayers for optoelectronic devices
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Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxyBeongJuKim한국결정성장학회 · 한국결정성장학회지2002 · 제12권 제6호Optoelectrical Properties of HgCdTe Epilayers Grown by Hot Wall Epitaxy윤석진, 홍광준한국센서학회 · 센서학회지2004 · 제13권 제4호Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxyKwangjoonHong, SeungnamBaek한국결정성장학회 · 한국결정성장학회지2003 · 제13권 제3호Growth and photoluminescence of the strained ZnTe/ZnMnTe single quantum wellYongDaeChoi한국결정성장학회 · 한국결정성장학회지2002 · 제12권 제6호Photoluminescence characteristics of ZnTe single crystal thin films substituted by sulfurYongDaeChoi한국결정성장학회 · 한국결정성장학회지2003 · 제13권 제6호CuPt-type ordering in Zn-rich CdxZn1 - xTe epilayers grown on GaAs and ZnTe/GaAsMyoungSeokKwon한국결정성장학회 · 한국결정성장학회지2003 · 제13권 제5호
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