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Properties of photoluminescience for ZnSe/GaAs epilayer grown by hot wall epitaxy
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Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxyBeongJuKim한국결정성장학회 · 한국결정성장학회지2002 · 제12권 제6호Growth and characterization of the high quality ZnTe epilayers for optoelectronic devicesDae-JungKim, Yang-JuneJung, YongDaeChoi, Young-MoonYu한국결정성장학회 · 한국결정성장학회지2003 · 제13권 제3호Optoelectrical Properties of HgCdTe Epilayers Grown by Hot Wall Epitaxy윤석진, 홍광준한국센서학회 · 센서학회지2004 · 제13권 제4호Growth and photoluminescence of the strained ZnTe/ZnMnTe single quantum wellYongDaeChoi한국결정성장학회 · 한국결정성장학회지2002 · 제12권 제6호Optoelectrical properties for CuGaSe₂layers grown by hot wall epitaxyJinju Bang, Junwoo Jeong, Sangyoul Lee청정에너지연구소 · Journal of Ceramic Processing Research2008 · 제9권 제6호Growth and optoelectrical properties of CdIn2S4 epilayers by hot wall epitaxy홍광준청정에너지연구소 · Journal of Ceramic Processing Research2005 · 제6권 제3호
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