A 600 GHz Varactor Doubler using CMOS 65nm process
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Varactor and active mode doublers are fabricated and compared in 600 GHz frequency range in terms of output power using CMOS 65nm technology. In designing a frequency multiplier, active mode is generally preferred, since it can provide high conversion efficiency and bandwidth. On the other hands, varactor mode is rarely used when active mode is available because of its severe operation instability, though it can provide high conversion efficiency theoretically. However, in the high frequency range such as 600 GHz band which is far above the cut-off frequency of 65nm NMOSFET, there is possibility that varactor mode outperforms active mode. As a result of measurement, output power of -19.25 dBm is obtained for the varactor mode doubler which is larger than the active mode doubler by the amount of 3.5 - 6 dBm in different measured frequency. The result is fairly acceptable in 600 GHz frequency considering the process technology.
Abstract
Varactor and active mode doublers are fabricated and compared in 600 GHz frequency range in terms of output power using CMOS 65nm technology. In designing a frequency multiplier, active mode is generally preferred, since it can provide high conversion efficiency and bandwidth. On the other hands, varactor mode is rarely used when active mode is available because of its severe operation instability, though it can provide high conversion efficiency theoretically. However, in the high frequency range such as 600 GHz band which is far above the cut-off frequency of 65nm NMOSFET, there is possibility that varactor mode outperforms active mode. As a result of measurement, output power of -19.25 dBm is obtained for the varactor mode doubler which is larger than the active mode doubler by the amount of 3.5 - 6 dBm in different measured frequency. The result is fairly acceptable in 600 GHz frequency considering the process technology.
참고문헌 (8)
- C. H. PAGE, "Harmonic Generation with Ideal Rectifiers", Proceedings of the IRE, 46(10), pp.1738~1740 (1958)
- Stephen A. Maas, "Nonlinear Microwave and RF circuits" (2003), Artech House
- "Advanced Design System", Agilent Technologies, ~
- R. Han, "A High-Power Broadband Passive Terahertz Frequency Doubler in CMOS", IEEE Transactions on Microwave Theory and Techniques, 61(13), pp.1150~1160 (2013)
- Erick Pederse, "Performance Evaluation of CMOS Varactors for Wireless RF Applications", Proceedings of 17th IEEE NORCHIP conference, pp.73~78 (1999)
- "ANSYS Electromagnetics Suite 20-15", ~
- R. H. Pantell, "General power relationships for positive and negative nonlinear resistive elements", Proceedings of the IRE, 46(12), pp.1910~1913 (1958)