A Millimeter-wave Up-converter for 28-GHz 5G Mobile Systems in 65-nm CMOS Technology
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5G dual-conversion transmitter has an issue that the frequency of local-oscillator second-harmonic signal is placed near that of the desired RF output signal. A millimeter-wave up-conversion mixer utilizing an on-chip transformer with capacitance compensation at the output stage of the up-conversion mixer is proposed for 28 GHz 5G dual-conversion transmitter in order to suppress local-oscillator second-harmonic signal at the output of the up-conversion mixer. An IF amplifier and an up-conversion mixer with local-oscillator buffer was implemented in a 65-nm CMOS process. It consumes a power of 32 mW from a 1-V supply voltage. It provides a gain greater than 19.5 dB, a third-order output intercept point higher than 3.7 dBm, and a local-oscillator second-harmonic leakage signal less than -44 dBm in the frequency ranges from 26.5 GHz to 29.5 GHz.
Abstract
5G dual-conversion transmitter has an issue that the frequency of local-oscillator second-harmonic signal is placed near that of the desired RF output signal. A millimeter-wave up-conversion mixer utilizing an on-chip transformer with capacitance compensation at the output stage of the up-conversion mixer is proposed for 28 GHz 5G dual-conversion transmitter in order to suppress local-oscillator second-harmonic signal at the output of the up-conversion mixer. An IF amplifier and an up-conversion mixer with local-oscillator buffer was implemented in a 65-nm CMOS process. It consumes a power of 32 mW from a 1-V supply voltage. It provides a gain greater than 19.5 dB, a third-order output intercept point higher than 3.7 dBm, and a local-oscillator second-harmonic leakage signal less than -44 dBm in the frequency ranges from 26.5 GHz to 29.5 GHz.
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