65nm CMOS 스위칭-증폭기를 이용한 60GHz 능동위상변화기 설계
A 60GHz Active Phase Shifter with 65nm CMOS Switching-Amplifiers
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초록
A 60GHz active phase shifter with 65nm CMOS is presented by replacing passive switches in switched-line type phase shifter with active ones. Active-switch phase shifter is composed of active-switch blocks and passive delay network blocks. The active-switch phase shifter design is compact compare with the conventional vector-sum phase shifter. Active-switch blocks are designed to accomplish required input and output impedances whose requirements are different whether the switch is on or off. And passive delay network blocks are composed of lumped L,C instead of normal microstrip line to reduce the size of the circuit. An 1-bit phase shifter is fabricated by TSMC 65nm CMOS technology and measurement results present -4dB average insertion loss and 120 degree phase shift at 65GHz.
Abstract
A 60GHz active phase shifter with 65nm CMOS is presented by replacing passive switches in switched-line type phase shifter with active ones. Active-switch phase shifter is composed of active-switch blocks and passive delay network blocks. The active-switch phase shifter design is compact compare with the conventional vector-sum phase shifter. Active-switch blocks are designed to accomplish required input and output impedances whose requirements are different whether the switch is on or off. And passive delay network blocks are composed of lumped L,C instead of normal microstrip line to reduce the size of the circuit. An 1-bit phase shifter is fabricated by TSMC 65nm CMOS technology and measurement results present -4dB average insertion loss and 120 degree phase shift at 65GHz.
참고문헌 (4)
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- P.-S. Wu, "A 40-74 GHz Amplitude", Phase Control MMIC using 90-nm CMOS Technology, 2007, 115~118
- E.Cohen, "A bidirectional TX", RX four element phased-array at 60GHz with RF-IF conversion block in 90nm CMOS process, 2009, ~